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HiPerFASTTM IGBT with Diode
C2-Class High Speed IGBTs
IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE(sat) tfi typ
= 600 V = 70 A = 2.7 V = 32 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600 V TC = 25C
Maximum Ratings 600 600 20 30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ... +150 300 250 V V V V A A A A W C C C C C g g
TO-247 AD (IXGH)
C (TAB) G C E
TO-268 (IXGT)
G
E
C (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Md Weight Mounting torque (TO-247) TO-247 TO-268 Test Conditions
Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speed for high frequency aaplications High power surface mountable package
1.13/10Nm/lb.in. 6 4
Symbol
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 TJ = 25C TJ = 125C 5.0 200 3 100 TJ = 25C TJ = 125C 2.7 1.8 V A mA nA V V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 24 A, VGE = 15 V
(c) 2005 IXYS All rights reserved
DS99169A(01/05)
IXGH 30N60C2D1 IXGT 30N60C2D1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 28 1430 VCE = 25 V, VGE = 0 V, f = 1 MHz 140 40 70 IC = 24 A, VGE = 15 V, VCE = 300 V 10 23 13 Inductive load, TJ = 25C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 15 70 60 0.19 13 Inductive load, TJ = 125C IC = 24 A, VGE = 15 V VCE = 400 V, RG = 5 17 0.22 120 130 0.59 140 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 24 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns 0.30 mJ ns ns mJ ns ns mJ 0.65 K/W
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ =150C 1.6 2.5 4 V V A ns ns
IF = 30 A, VGE = 0 V, Pulse test t 300 s, duty cycle d 2 %
IF = 30 A, VGE = 0 V, -diF/dt =100 A/s, TJ = 100C VR = 100 V TJ = 100C 100 IF = 1 A; -di/dt = 100 A/s; VR = 30 V 25
0.9 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXGH 30N60C2D1 IXGT 30N60C2D1
Fig. 1. Output Characteristics @ 25 Deg. C
50 45 40 35 VGE = 15V 13V 11V 9V 270 240 210
Fig. 2. Extended Output Characteristics @ 25 deg. C
VGE = 15V 13V 11V
I C - Amperes
30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3
I C - Amperes
180 150 120 90 60
7V
9V
7V
5V
30 5V 0 3.5 0 2 4 6 8 10 12 14 16 18
V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C
50 45 40 VGE = 15V 13V 11V 9V 1.2
V C E - Volts Fig. 4. Dependence of V CE(sat ) on Tem perature
V GE = 15V
1.1 I C = 48A
V C E (sat)- Normalized
I C - Amperes
35 30 25 20 15 10 5 0 0.5 1 1.5 2 2.5 3 3.5 5V 7V
1.0 0.9 0.8 0.7 0.6 0.5 25 50 75 100 125 150 I C = 24A
I C = 12A
V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage
4.5 TJ = 25C 4 I C = 48A 24A 12A 200 180 160
TJ - Degrees Centigrade Fig. 6. Input Adm ittance
I C - Amperes
140 120 100 80 60
VC E - Volts
3.5
3
2.5
40 20
TJ = 25C 125C
2 5 6 7 8 9 10 11 12 13 14 15 16 17
0 3 4 5 6 7 8 9 10 11 12
V G E - Volts
(c) 2005 IXYS All rights reserved
V G E - Volts
IXGH 30N60C2D1 IXGT 30N60C2D1
Fig. 7. Transconductance
35 30 25 2000 1800 1600 TJ = 25C 125C
Fig. 8. Dependence of Turn-Off Energy on RG
TJ = 125C VGE = 15V VCE = 400V
E off - microJoules
g f s - Siemens
1400 1200 1000 800 600 400
I C = 48A
20 15 10 5 0 0 20 40
I C = 24A
200 0 60 80 100 120 140 160 180 200 5 10 15 20 25 30 35
I C = 12A 40 45 50
I C - Amperes Fig. 9. Dependence of Turn-Off Energy on IC
R G = 5 VGE = 15V VCE = 400V
R G - Ohms Fig. 10. Dependence of Turn-Off Energy on Tem perature
1400 1200 1000 800 600 400 200 I C = 12A 0 I C = 24A R G = 5 VGE = 15V VCE = 400V
1400 1200
E off - microJoules
800 600 400 200 0 10 15 20 25 30
TJ = 125C
TJ = 25C
35
40
45
50
E off - microJoules
1000
I C = 48A
25
35
45
55
65
75
85
95
105 115 125
I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG
450 200
TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC
180 160 140 120 100 80 60 40 TJ = 25C 10 15 20 25 30 35 40 45 50
Switching Time - nanosecond
Switching Time - nanosecond
400 350 300 250 200 150 100 5
td(off) tfi - - - - - TJ = 125C VGE = 15V VCE = 400V
td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 400V TJ = 125C
I C = 24A I C = 48A
I C = 12A
10
15
20
R G - Ohms
25
30
35
40
45
50
I C - Amperes
IXGH 30N60C2D1 IXGT 30N60C2D1
Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature
180 15
Fig. 14. Gate Charge
VCE = 300V I C = 24A I G = 10mA
Switching Time - nanosecond
160 140 120 100 80 60 40 25
td(off) tfi - - - - - R G = 5 VGE = 15V VCE = 400V
I C = 48A 24A 12A
12
VG E - Volts
I C = 12A 24A 48A 55 65 75 85 95 105 115 125
9
6
3
0 35 45 0 10 20 30 40 50 60 70
TJ - Degrees Centigrade Fig. 15. Capacitance
10000 f = 1 MHz C ies 1000
Q G - nanoCoulombs
Capacitance - p F
100
C oes
C res 10 0 5 10 15 20 25 30 35 40
V C E - Volts
Fig. 16. Maxim um Transient Therm al Resistance
1.0
R (th) J C - (C/W)
0.5
0.1 1 10
Pulse Width - milliseconds
100
1000
(c) 2005 IXYS All rights reserved
IXGH 30N60C2D1 IXGT 30N60C2D1
60 A 50 IF 40 1000 nC 800 Qr
TVJ= 100C IF= 60A IF= 30A
IRM
30 A 25 20 15
TVJ= 100C IF= 60A IF= 30A
TVJ=150C
30
600
TVJ=100C
20
400 10
TVJ=25C
10 0
200
5 0
0
1
2 VF
3V
0 100
A/s 1000 -diF/dt
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 17. Forward current IF versus VF
2.0
Fig. 18. Reverse recovery charge
Fig. 19. Peak reverse current IRM
20 V VFR 15 1.00 tfr 0.75 s
90 ns
TVJ= 100C
TVJ= 100C VFR tfr
1.5 Kf 1.0
trr 80
IF= 60A IF= 30A IRM
70
10
0.50
0.5
5
0.25
Qr
0.0 60 0 0.00 600 A/s 1000 800 diF/dt
0
40
80
120 C 160 TVJ
0
200
400
600 -diF/dt
800 A/s 1000
0
200
400
Fig. 20. Dynamic parameters QQ IRM Fig. 20. Dynamic parameters r, r, IRM
1 K/W
Fig. 21. Recovery time trr versus
Fig. 22. Peak forward voltage VFR
Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 ti (s) 0.0052 0.0003
0.1 ZthJC
1 2
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
s t
1
Fig. 23. Transient thermal resistance junction to case

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